maximum ratings and electrical characteristics for capacitive load, derate current by 20%. single phase, half wave, 60hz, resistive or inductive load. rating at 25 o c ambient temperature unless otherwise specified. notes : -55 to +150 symbol v rrm v rms v dc if (av) i fsm v f i r trr c j t j , t stg 50 100 200 140 200 400 35 70 280 50 100 400 600 420 600 10.0 10.0 100 1.3 1.7 0.98 35 250 65 2.2 unit v v v v a a ua ua o c pf o cw ns 300 210 300 maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified peak forward surge current, 8.3ms single maximum instantaneous forward voltage maximum dc reverse current @t j =25 o c typical junction capacitance (note 2) operating junction and storage current t c =100 o c half sine-wave superimposed on rated load (jedec method) @ 5.0 a at rated dc blocking voltage @t j =125 o c maximum reverse recovery time (note 1) typical thermal resistance (note 3) features ? l o w forward voltage drop ? fast switching for high efficiency ? high current capability ? case:to-220ab heatsink package ? high surge current capability ? weight: 2.24 grams ? polarity:as marked on diode body method 208 ? mounting position: any ? terminals: solderable per mil-std-202 mechanical data ? low reverse leakage current r jc temperature range (1) reverse recovery test conditions i f = 0.5a, i r = 1.0a, irr = 0.25a. (2) measured at 1.0 mhz and applied reverse voltage of 4.0 volts dc. (3) thermal resistance junction to case. ? epoxy: ul 94v-0 rate flame retardant .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) min .624(15.87) .269(6.85) .548(13.93) .50(12.7)min .177(4.5)max .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)max .1(2.54) .1(2.54) .387(9.85) to-220ab unit : inch (mm) ? mur1005 thru mur1060 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 pb free plating product mur1005 thru mur1060 pb 10.0 ampere heatsink glass passivated ultra fast recovery rectifier positive negative doubler common cathode case case case common anode suffix "n" suffix "d" suffix "ct" case reverse doubler suffix "e" mur1005ct mur1005n MUR1005D mur1010ct mur1010n mur1010d mur1020ct mur1020n mur1020d mur1030ct mur1030n mur1030d mur1040ct mur1040n mur1040d mur1060ct mur1060n mur1060d mur1005e mur1010e mur1020e mur1030e mur1040e mur1060e common cathode polarity suffix "ct" common anode polarity suffix "n" doubler polarity suffix "d" reverse polarity suffix "e" free datasheet http:///
fig.1 - forward current derating curve fig.3 - typical instantaneous forward characteristics average forward rectified current, amperes 10 6 4 2 8 iinstantaneous forward current, amperes 1 10 100 0.1 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 0 0 50 100 150 case temperature, o c instantaneous forward voltage, volts fig.2 - maximum non-repetitive peak forward surge current peak forward surge current, amperes number of cycles at 60hz 0 20 40 60 80 100 1 10 100 fig.4 - typical reverse characteristics percent of rated peak reverse voltage,% instantaneous reverse current, microamperes 0.1 0 1 10 1000 100 20 40 60 80 100 fig.5 - typical junction capacitance reverse voltage, volts 0.1 10 junction capacitance, pf 1000 1.0 4.0 10 100 100 60 hz resistive or inductive load pulse width 8.3ms single half-sire-wave (jedec method) t j =25 o c pulse width=300us 1% duty cycle t j =125 o c t j =25 o c t j = 25 o c f = 1.0 mhz vsig = 50mvp-p mur1005-mur1020 mur1030-mur1040 mur1060 ? mur1005 thru mur1060 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 free datasheet http:///
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